DocumentCode
773562
Title
Delta doped tunnel diode: a new negative differential resistance device
Author
Gilman, J.M.A. ; O´Neill, A.G.
Author_Institution
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
Volume
26
Issue
9
fYear
1990
fDate
4/26/1990 12:00:00 AM
Firstpage
601
Lastpage
602
Abstract
A novel tunnel diode is proposed. Modulation doping is used to define a two dimensional electron or hole gas on either side of a p-n junction tunnelling barrier. The additional parameter of doping spike separation enables a wide range of I-V characteristics to be selected. This leads to a decoupling of the current peak and corresponding voltage. Improvements in current density and speed are predicted.
Keywords
p-n homojunctions; semiconductor device models; semiconductor doping; tunnel diodes; 2D electron gas; 2D hole gas; I-V characteristics; current density; decoupling of current peak; delta doped tunnel diode; doping spike separation; modulation doping; negative differential resistance device; p-n junction tunnelling barrier; speed;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900395
Filename
48780
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