Title :
Delta doped tunnel diode: a new negative differential resistance device
Author :
Gilman, J.M.A. ; O´Neill, A.G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
fDate :
4/26/1990 12:00:00 AM
Abstract :
A novel tunnel diode is proposed. Modulation doping is used to define a two dimensional electron or hole gas on either side of a p-n junction tunnelling barrier. The additional parameter of doping spike separation enables a wide range of I-V characteristics to be selected. This leads to a decoupling of the current peak and corresponding voltage. Improvements in current density and speed are predicted.
Keywords :
p-n homojunctions; semiconductor device models; semiconductor doping; tunnel diodes; 2D electron gas; 2D hole gas; I-V characteristics; current density; decoupling of current peak; delta doped tunnel diode; doping spike separation; modulation doping; negative differential resistance device; p-n junction tunnelling barrier; speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900395
