An Analytical Model of the Intracavity Optical Second Harmonic Generation in a Vertical-External-Cavity Surface-Emitting Laser

Author

Kim, Jun-Youn ; Shim, Jongin

Author_Institution

Semicond. Device Lab., Samsung Adv. Inst. of Technol., Suwon

Volume

44

Issue

8

fYear

2008

Firstpage

755

Lastpage

762

Abstract

An analysis model of an intracavity optical second-harmonic generation in a vertical-external-cavity surface-emitting laser (VECSEL) is presented. The model is based on the conventional semiconductor rate equations for the carrier and the photon combined with the second harmonic generation process. The parameters used in the model are obtainable from experimental data such as power transfer curves, output spectrum, and cavity configuration. The accuracy of our model is confirmed by comparing experimental and theoretical results. The influences of physically adjustable parameters in the VECSEL on both the lasing performance and the second harmonic generation were thoroughly investigated by utilizing the proposed analysis model.

Keywords

laser cavity resonators; optical harmonic generation; semiconductor lasers; surface emitting lasers; VECSEL; intracavity optical second harmonic generation; output spectrum; power transfer curves; vertical external cavity surface emitting laser; Analytical models; Equations; Harmonic analysis; Laser modes; Nonlinear optics; Optical harmonic generation; Performance analysis; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Birefringence; green semiconductor laser; high-power laser; nonlinear coupling; rate equation; round-trip loss; second-harmonic generation (SHG); vertical-cavity lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2008.924439

Filename

4550655