DocumentCode :
7737
Title :
Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments
Author :
Raine, M. ; Goiffon, Vincent ; Girard, S. ; Rousseau, Alain ; Gaillardin, M. ; Paillet, P. ; Duhamel, O. ; Virmontois, Cedric
Author_Institution :
DAM, CEA, Arpajon, France
Volume :
60
Issue :
6
fYear :
2013
fDate :
Dec. 2013
Firstpage :
4297
Lastpage :
4304
Abstract :
A modeling approach is proposed to predict the transient and permanent degradation of image sensors in complex radiation environments. The example of the OMEGA facility is used throughout the paper. A first Geant4 simulation allows the modeling of the radiation environment (particles, energies, timing) at various locations in the facility. The image sensor degradation is then calculated for this particular environment. The permanent degradation, i.e. dark current increase, is first calculated using an analytical model from the literature. Additional experimental validations of this model are also presented. The transient degradation, i.e. distribution of perturbed pixels, is finally simulated with Geant4 and validated in comparison with experimental data.
Keywords :
CMOS image sensors; radiation effects; transient analysis; CMOS image sensor; Geant4 simulation; OMEGA facility; analytical model; complex radiation environments; dark current; image sensor permanent degradation; transient prediction; Active pixel sensors; CMOS image sensors; Dark current; Degradation; Neutrons; Radiation effects; Single event transients; Transient analysis; Active pixel sensor (APS); CMOS image sensor (CIS); Geant4; dark current distribution; displacement damage dose (DDD); inertial confinement fusion (ICF); neutrons; single-event transient (SET);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2013.2284798
Filename :
6678319
Link To Document :
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