DocumentCode :
773875
Title :
Monitoring of Silicon Detector Systems with Pulsed GaAs
Author :
Kuckuck, Robert W. ; Lee, J.Chong
Author_Institution :
University of California Lawrence Radiation Laboratory Livermore, California
Volume :
12
Issue :
1
fYear :
1965
Firstpage :
356
Lastpage :
360
Abstract :
Use of the closely matching emission of GaAs and spectral response of silicon detectors is proposed as an optical method of monitoring overall nuclear detector system response. A GaAs diode is a high-speed current device which emits light with an intensity linearly related to the electrical input over a wide range and which has a frequency response well beyond that of normal silicon detectors. The speed of the GaAs source enables overall evaluation of the silicon detector and its associated circuitry. Where applicable, the optical monitoring of nuclear detector systems with compact GaAs sources offers a highly flexible alternative to isotope and electrical pulse methods. Experimental behavior of sone typical sources and detectors and the results of a procedure developed to monitor a nuclear pulse detector system are presented.
Keywords :
Circuits; Detectors; Diodes; Frequency response; Gallium arsenide; High speed optical techniques; Monitoring; Optical pulses; Silicon; Stimulated emission;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1965.4323535
Filename :
4323535
Link To Document :
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