Title :
High-gain microwave amplifier tuneable over a decade bandwidth
Author :
Moazzam, M.R. ; Aitchison, C.S.
Author_Institution :
Microwave & Commun. Res. Group, Westminster Univ., London
fDate :
12/1/1995 12:00:00 AM
Abstract :
A novel microwave single-stage MESFET distributed amplifier configuration based on the dual-fed distributed-amplification technique is described. In this configuration the input and output line idle ports are reactively terminated. This results in a significant improvement in gain and power added efficiency over conventional distributed and dual-fed distributed amplifiers. The amplifier band of operation can be tuned by varying the terminating reactances. This novel configuration also has the potential to be used as a tuneable oscillator with a decade tuning range
Keywords :
MESFET circuits; circuit tuning; distributed amplifiers; microwave amplifiers; MESFET; decade bandwidth; dual-fed distributed-amplification technique; high-gain microwave amplifier; input line idle ports; output line idle port; power added efficiency; reactively terminated ports; single-stage distributed amplifier; terminating reactances; tuneable amplifier;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
DOI :
10.1049/ip-map:19952360
