4.2-mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition

Author

Nishida, Tetsuo ; Takaya, Mitsuru ; Kakinuma, Satoshi ; Kaneko, Takeo

Author_Institution

VIE Project, Epson Corp., Nagano, Japan

Volume

11

Issue

5

fYear

2005

Firstpage

958

Lastpage

961

Abstract

We achieved high output power GaInNAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 1261.5 nm by means of decreasing the incorporation of aluminum into the GaInNAs well layers. The continuous wave (CW) output power at room temperature reached 4.2 mW, with a slope efficiency of 0.52 W/A. Secondary ion mass spectrometry (SIMS) analysis revealed that the aluminum incorporated into the GaInNAs layer did not originate from diffusion from the adjacent layers of GaInNAs, but from residual aluminum in the reactor.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; secondary ion mass spectra; semiconductor growth; surface emitting lasers; 1261.5 nm; 293 to 298 K; 4.2 mW; GaInNAs; GaInNAs VCSEL; GaInNAs well layers; aluminum incorporation; continuous wave output power; high power laser; long-wavelength VCSEL; metalorganic chemical vapor deposition; residual aluminum; room temperature; secondary ion mass spectrometry; semiconductor growth; vertical cavity surface-emitting lasers; Aluminum; Chemical lasers; Chemical vapor deposition; Inductors; Mass spectroscopy; Power generation; Power lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Aluminum; GaInNAs; long-wavelength lasers; metalorganic chemical vapor deposition (MOCVD); quantum-well (QW); secondary ion mass spectrometry (SIMS); vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.853734

Filename

1564029