Title :
40 Gbit/s monolithic integrated modulator driver in InP SHBT technology
Author :
Lao, Z. ; Yu, M. ; Ho, V. ; Guinn, K. ; Xu, M. ; Lee, S. ; Radisic, V. ; Wang, K.C.
Author_Institution :
Adv. Product Dev. Center, Opnext Inc., Thousand Oaks, CA, USA
Abstract :
A high-speed and high-gain modulator driver circuit is presented using 4-inch InP SHBT technology. The IC was developed for driving EAM modulators in 40 Gbit/s optical fibre systems. The monolithic integrated circuit features output amplitude control and output crossing point control. Measured results show the circuit operates at 40 Gbit/s with a swing of 2.5 Vp-p at each output and 9/8 ps rise/fall times. The power dissipation is 1.5 W with a standard power supply of -5.2 V.
Keywords :
III-V semiconductors; bipolar integrated circuits; driver circuits; electro-optical modulation; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; optical communication equipment; -5.2 V; 1.5 W; 4 inch; 40 Gbit/s; 8 ps; 9 ps; EAM modulators; Gbit/s optical fibre systems; InP; InP SHBT technology; electroabsorption modulators; monolithic integrated modulator driver; output amplitude control; output crossing point control;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030730
