Stable polarization operation of 1.3-μm wavelength vertical-cavity surface-emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding

We present stable polarization of a long-wavelength vertical-cavity surface-emitting laser (LW VCSEL). The polarization control was achieved through growing its active region on a (113)B InP substrate, which was integrated to [001] GaAs-based distributed Bragg reflectors by a wafer-bonding technique. Theoretical investigation showed that to achieve high polarization stability, a large dichroism such as an anisotropic gain is needed. It was also shown that the (113)B and other planes of the (11n) family have asymmetry, which results in asymmetric stress and anisotropic optical gain in a strained multiquantum well. An index-guiding mesa structure was fabricated in an asymmetric shape. The index guiding either enhanced or distracted the polarization stability originating from gain anisotropy, depending on its orientation of the asymmetry, as was confirmed by a statistical summary. Using a VCSEL with an appropriate index-guiding structure, we performed 1-Gb/s modulation and confirmed single polarization under large-signal modulation.