DocumentCode :
774036
Title :
Gain and noise saturation of wide-band InAs-InP quantum dash optical amplifiers: model and experiments
Author :
Hadass, D. ; Bilenca, A. ; Alizon, R. ; Dery, H. ; Mikhelashvili, V. ; Eisenstein, G. ; Schwertberger, R. ; Somers, A. ; Reithmaier, J.P. ; Forchel, A. ; Calligaro, M. ; Bansropun, S. ; Krakowski, M.
Author_Institution :
Electr. Eng. Dept., Technion, Haifa, Israel
Volume :
11
Issue :
5
fYear :
2005
Firstpage :
1015
Lastpage :
1026
Abstract :
We present a theoretical model for gain and noise saturation in quantum dash (QDash) semiconductor optical amplifiers. The model is based on the density matrix formalism and addresses static saturation spectra. The calculations are confirmed by a series of experiments which highlight the unique properties of these amplifiers. We demonstrate a high gain, a wide bandwidth, and high saturation power. The saturation spectrum is shown to be asymmetric, emphasizing saturation at short wavelength. The asymmetry stems from the high energy tail of the density of state function in those quantum wire (QWire) like gain media as well as from the interactions with the wetting layer.
Keywords :
III-V semiconductors; indium compounds; optical saturation; quantum dot lasers; semiconductor device models; semiconductor device noise; semiconductor optical amplifiers; wide band gap semiconductors; InAs-InP quantum dash optical amplifiers; density matrix formalism; density of state function; gain saturation; noise saturation; quantum wirelike gain media; saturation spectrum; static saturation spectra; wetting layer interactions; wide-band optical amplifiers; Bandwidth; Broadband amplifiers; Optical amplifiers; Optical noise; Optical saturation; Quantum dots; Semiconductor device noise; Semiconductor optical amplifiers; Stimulated emission; Tail; Gain saturation; multiwavelength amplification; optical communication; quantum dots (QDs); semiconductor optical amplifiers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2005.853740
Filename :
1564036
Link To Document :
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