Title :
Room temperature operation of InAs quantum-dot laser utilizing GaAs photonic-crystal-slab-based line-defect waveguide with optical pump
Author :
Sugimoto, Y. ; Inoue, K. ; Ikeda, N. ; Ohkouchi, S. ; Tanaka, Y. ; Nakamura, Y. ; Nakamura, H. ; Sasaki, H. ; Ishida, K. ; Asakawa, K.
Author_Institution :
Fermosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
We have successfully fabricated InAs quantum dots (QDs) embedded in a line-defect waveguide in an air-bridge type GaAs photonic-crystal slab (PCS) and observed laser action from optical-pumping. This lasing is found to occur without any optical cavity, such as a set of Fabry-Perot mirrors. Comparison of the observed transmittance spectrum with the calculated band dispersion of the triple-lines defect mode enables us to specify the lasing wavelength as that at the band edge. From this fact, it follows that the distributed feedback mechanism at the band edge with an infinitely small group velocity is responsible for the present lasing.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; optical dispersion; optical pumping; photonic crystals; quantum dot lasers; waveguide lasers; 293 to 298 K; GaAs; GaAs photonic crystal slab; InAs; InAs quantum-dot laser; air-bridge type photonic crystal slab; band dispersion; band edge; distributed feedback mechanism; group velocity; laser action; line-defect waveguide; optical pump; room temperature operation; transmittance spectrum; triple-lines defect mode; Gallium arsenide; Laser excitation; Laser modes; Optical feedback; Optical pumping; Optical waveguides; Personal communication networks; Quantum dot lasers; Slabs; Temperature; Photonic band gap; photonic crystals (PCs); photonic integrated circuits (PICs); slab; waveguides (WGs);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2005.854283
