DocumentCode :
774145
Title :
Atomic layer deposited HfO2in metal-insulator-metal capacitor for RF IC applications
Author :
Jeong, S.-W. ; Roh, Y.
Author_Institution :
Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon
Volume :
44
Issue :
13
fYear :
2008
Firstpage :
809
Lastpage :
810
Abstract :
DC and RF characteristics of Si/SiO2(~4 mum)/Ti/Pt-HfO2-Al metal-insulator-metal (MIM) devices were investigated with atomic layer-deposited (ALD) high-k HfO2 films. Excellent DC and RF properties were obtained compared to those using either SiO2 or Si3N4. Both high capacitance density and small frequency-dependent capacitance reduction were observed in the MIM capacitors, in which ALD HfO2 was used as an insulator.
Keywords :
MIM devices; aluminium; atomic layer deposition; capacitance; capacitors; hafnium compounds; high-k dielectric thin films; platinum; silicon; silicon compounds; titanium; Si-SiO2-Ti-Pt-HfO2-Al; atomic layer deposition; capacitance density; frequency-dependent capacitance reduction; high-k films; metal-insulator-metal capacitor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20081140
Filename :
4550701
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=774145
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