Title :
High-efficiency InGaAs QW distributed Bragg reflector laser with curved grating for squeezed light generation
Author :
Uemukai, Masahiro ; Nozu, Shunsuke ; Suhara, Toshiaki
Author_Institution :
Dept. of Electron. Eng., Osaka Univ., Japan
Abstract :
A high-efficiency InGaAs quantum-well curved distributed Bragg reflector (DBR) laser was designed for squeezed light generation and fabricated using a selective-area quantum-well disordering technique to reduce absorption loss in the DBR grating region. Single-mode lasing with side-mode suppression ratio of 50 dB was obtained, and an external differential quantum efficiency as high as 0.71 was achieved under continuous-wave operation. Using balanced detection technique, the laser intensity noise relative to the standard quantum limit (SQL) was measured. Ultra-low noise characteristic of 0.8 dB below the standard quantum limit was achieved by wideband constant-current driving of the laser. This is the first demonstration of single-mode squeezed light generation by a monolithic semiconductor laser at room temperature.
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; laser noise; optical design techniques; optical fabrication; optical squeezing; quantum well lasers; semiconductor device measurement; semiconductor device noise; InGaAs; InGaAs QW distributed Bragg reflector laser; curved grating; external differential quantum efficiency; laser intensity noise; selective-area quantum-well disordering technique; side-mode suppression ratio; single-mode lasing; squeezed light generation; standard quantum limit; Absorption; Bragg gratings; Distributed Bragg reflectors; Indium gallium arsenide; Laser noise; Measurement standards; Optical design; Quantum well lasers; Semiconductor device noise; Semiconductor lasers; Amplitude-squeezed light; curved grating; distributed Bragg reflector (DBR) lasers; quantum-well (QW) lasers; semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2005.853729