Monolithic dual-wavelength high-power lasers for CD-R/DVD ± R/RW/RAM

Author

Uchida, Shiro ; Agatsuma, Shinichi ; Hoshi, Nozomu ; Tanno, Katsuharu ; Iki, Hideto ; Yoshida, Shigenori ; Satoh, Shinya ; Asano, Yoshihiro ; Sahara, Kenji ; Yamamoto, Tadashi

Author_Institution

Technol. Dept., Sony Shiroishi Semicond. Inc., Miyagi-Ken, Japan

Volume

11

Issue

5

fYear

2005

Firstpage

1148

Lastpage

1152

Abstract

The monolithic integration of a GaInP-based high-power red laser for DVD ± R/RW/RAM and an AlGaAs-based high-power infrared laser for CD-R was successfully achieved for the first time. The monolithic device provides reliable output power of 200 mW for red lasers and 240 mW for infrared lasers, allowing writing speeds of 12× for DVD-R and 48× for CD-R. The kink power of AlGaInP DVD lasers is dramatically improved up to 300 mW from 220 mW even at the high temperature of 85°C, due mainly to the reduction of the lateral leakage current. The beam separation is precisely controlled to be within 110±1 μm despite forming separately two ridge stripes.

Keywords

CD-ROMs; III-V semiconductors; aluminium compounds; digital versatile discs; gallium arsenide; indium compounds; integrated optoelectronics; laser beam applications; random-access storage; semiconductor device reliability; semiconductor lasers; 200 mW; 240 mW; 85 degC; AlGaAs; AlGaAs-based high-power infrared laser; CD-R; DVD ± R/RW/RAM; GaInP; GalnP-based high-power red laser; monolithic integration; reliability; Chemical lasers; DVD; Laser beams; Optical device fabrication; Optical recording; Power generation; Power lasers; Semiconductor lasers; Substrates; Waveguide lasers; CD-R; dual wavelength; high power; monolithic;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.853787

Filename

1564054