Title :
Monolithic dual-wavelength high-power lasers for CD-R/DVD ± R/RW/RAM
Author :
Uchida, Shiro ; Agatsuma, Shinichi ; Hoshi, Nozomu ; Tanno, Katsuharu ; Iki, Hideto ; Yoshida, Shigenori ; Satoh, Shinya ; Asano, Yoshihiro ; Sahara, Kenji ; Yamamoto, Tadashi
Author_Institution :
Technol. Dept., Sony Shiroishi Semicond. Inc., Miyagi-Ken, Japan
Abstract :
The monolithic integration of a GaInP-based high-power red laser for DVD ± R/RW/RAM and an AlGaAs-based high-power infrared laser for CD-R was successfully achieved for the first time. The monolithic device provides reliable output power of 200 mW for red lasers and 240 mW for infrared lasers, allowing writing speeds of 12× for DVD-R and 48× for CD-R. The kink power of AlGaInP DVD lasers is dramatically improved up to 300 mW from 220 mW even at the high temperature of 85°C, due mainly to the reduction of the lateral leakage current. The beam separation is precisely controlled to be within 110±1 μm despite forming separately two ridge stripes.
Keywords :
CD-ROMs; III-V semiconductors; aluminium compounds; digital versatile discs; gallium arsenide; indium compounds; integrated optoelectronics; laser beam applications; random-access storage; semiconductor device reliability; semiconductor lasers; 200 mW; 240 mW; 85 degC; AlGaAs; AlGaAs-based high-power infrared laser; CD-R; DVD ± R/RW/RAM; GaInP; GalnP-based high-power red laser; monolithic integration; reliability; Chemical lasers; DVD; Laser beams; Optical device fabrication; Optical recording; Power generation; Power lasers; Semiconductor lasers; Substrates; Waveguide lasers; CD-R; dual wavelength; high power; monolithic;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2005.853787
