Title :
3.48 ps ECL ring oscillator using over-300 GHz fT/fmax InP DHBTs
Author :
Ida, M. ; Kurishima, Kenji ; Ishii, K. ; Watanabe, N.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
An ECL gate delay of 3.48 ps/stage in a 19-stage conventional ring oscillator fabricated in an over-300 GHz fT/fmax InP DHBT technology has been demonstrated. This is the first report (to the authors´ knowledge) of sub-4 ps ECL gate delay. Large collector current density contributes to the very short gate delay.
Keywords :
III-V semiconductors; bipolar logic circuits; delays; emitter-coupled logic; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; oscillators; 3.48 ps; 300 GHz; ECL gate delay; ECL ring oscillator; InP; InP DHBTs; collector current density; ultra-high-speed logic applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030782
