• DocumentCode
    774245
  • Title

    3.48 ps ECL ring oscillator using over-300 GHz fT/fmax InP DHBTs

  • Author

    Ida, M. ; Kurishima, Kenji ; Ishii, K. ; Watanabe, N.

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • Volume
    39
  • Issue
    16
  • fYear
    2003
  • Firstpage
    1215
  • Lastpage
    1217
  • Abstract
    An ECL gate delay of 3.48 ps/stage in a 19-stage conventional ring oscillator fabricated in an over-300 GHz fT/fmax InP DHBT technology has been demonstrated. This is the first report (to the authors´ knowledge) of sub-4 ps ECL gate delay. Large collector current density contributes to the very short gate delay.
  • Keywords
    III-V semiconductors; bipolar logic circuits; delays; emitter-coupled logic; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; oscillators; 3.48 ps; 300 GHz; ECL gate delay; ECL ring oscillator; InP; InP DHBTs; collector current density; ultra-high-speed logic applications;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030782
  • Filename
    1226590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=774245