Title :
Improving fMAX/fTratio in FinFETs using source/drain extension region engineering
Author :
Kranti, A. ; Armstrong, G.A.
Author_Institution :
Sch. of Electron., Electr. Eng. & Comput. Sci., Queen´´s Univ. Belfast, Belfast
Abstract :
A design methodology to optimise the ratio of maximum oscillation frequency to cutoff frequency, f MAX/f T, in 60 nm FinFETs is presented. Results show that 25 to 60 improvement in f MAX/f T at drain currents of 20-300 muA/mum can be achieved in a non-overlap gate-source/drain architecture. The reported work provides new insights into the design and optimisation of nanoscale FinFETs for RF applications.
Keywords :
MOSFET; integrated circuit design; radiofrequency integrated circuits; FinFETs; RF applications; current 20 muA to 300 muA; cutoff frequency; design methodology; drain extension region engineering; maximum oscillation frequency; source extension region engineering;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080696
