• DocumentCode
    774262
  • Title

    SiGe power devices for 802.11a wireless LAN applications at 5 GHz

  • Author

    Keerti, A. ; Pham, A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
  • Volume
    39
  • Issue
    16
  • fYear
    2003
  • Firstpage
    1218
  • Lastpage
    1220
  • Abstract
    The feasibility of SiGe heterojunction bipolar transistors (HBTs) for 802.11a wireless LAN power amplifier applications in the 5 GHz regime is demonstrated. The device layout is optimised using unit power devices to develop high-power HBTs. SiGe HBTs with an emitter area of 1152 μm2 achieve a maximum output power of 25 dBm and PAE of 36% at 5.35 GHz under a supply voltage of 3.0 V. The measured ACPR for this device under OFDM modulated signal is -23 and -32 dBc at 10 and 20 MHz offset, respectively, at an output power backed off by 9 dB from P1dB.
  • Keywords
    Ge-Si alloys; OFDM modulation; heterojunction bipolar transistors; power bipolar transistors; semiconductor materials; wireless LAN; 3.0 V; 36 percent; 5 GHz; 802.11a standard; ACPR; OFDM modulation; SiGe; SiGe power HBT; output power; power added efficiency; power amplifier; wireless LAN;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030764
  • Filename
    1226592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=774262