Four-channel 10-Gb/s operation of AlGaInAs-MQW-BH-DFB-LD array for 1.3-μm CWDM systems

Author

Tsuruoka, Kiyotaka ; Kobayashi, Ryuji ; Ohsawa, Youichi ; Tsukuda, Takumi ; Kato, Tomoaki ; Sasaki, Tatsuya ; Nakamura, Takahiro

Author_Institution

Syst. Device Res. Labs., NEC Corp., Shiga, Japan

Volume

11

Issue

5

fYear

2005

Firstpage

1169

Lastpage

1173

Abstract

We have developed a four-channel AlGaInAs multiple quantum well, buried heterostructure, distributed feedback laser diode (MQW BH-DFB-LD) array for 1.3-μm coarse wavelength division multiplexing (CWDM) systems. Fine detuning control by using a narrow-stripe selective metalorganic vapor-phase epitaxy (MOVPE) technique and an electron beam (EB) lithography technique enables 10-Gb/s operations in all channels at 85°C. We obtained throughputs of more than 40 Gb/s in total. We confirmed low crosstalk operations for a 250-μm pitch array. This is an attractive feature for fabricating compact transmitter modules.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; distributed feedback lasers; electron beam lithography; gallium arsenide; gallium compounds; optical crosstalk; optical transmitters; semiconductor laser arrays; telecommunication channels; vapour phase epitaxial growth; wavelength division multiplexing; 1.3 mum; 10 Gbit/s; 85 degC; AlGaInAs; AlGaInAs-MQW-BH-DFB-LD array; CWDM; buried heterostructure laser diode; coarse wavelength division multiplexing; crosstalk; distributed feedback laser diode; electron beam lithography; fine detuning control; metalorganic vapor-phase epitaxy; multiple quantum well laser diode; transmitter modules; Diode lasers; Distributed feedback devices; Electron beams; Epitaxial growth; Epitaxial layers; Lithography; Optical arrays; Quantum well devices; Semiconductor laser arrays; Wavelength division multiplexing; AlGaInAs; coarse wavelength division multiplexing (CWDM); crosstalk; distributed feedback (DFB) laser array; selective metalorganic vapar-phase epitaxy (MOVPE);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.853844

Filename

1564057