High-power high-efficiency 1150-nm quantum-well laser

Author

Erbert, Gotz ; Bugge, Frank ; Fricke, Jorg ; Ressel, Peter ; Staske, Ralf ; Sumpf, Bernd ; Wenzel, Hans ; Weyers, Markus ; Trankle, Gunther

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany

Volume

11

Issue

5

fYear

2005

Firstpage

1217

Lastpage

1222

Abstract

Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on the laser performance. Using a thick GaAs waveguide layer broad area devices with low vertical divergence of 20° FWHM and reliable operation at a power level of 80-mW/μm stripe width were demonstrated.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser reliability; laser transitions; optical design techniques; quantum well lasers; waveguide lasers; 1150 nm; GaAs; GaAs waveguide layers; InGaAs; InGaAs quantum wells; edge emitting diode lasers; quantum-well laser; reliable operation; Diode lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical waveguides; Pump lasers; Quantum well lasers; Semiconductor lasers; Thermal conductivity; Waveguide lasers; Gallium arsenide; high-power lasers; semiconductor lasers; waveguides;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.853843

Filename

1564064