Impact of thermal effects on Simulation accuracy of nonlinear dynamics in semiconductor lasers

Author

Lim, Cheng Guan ; Iezekiel, Stavros ; Snowden, Christopher M.

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

11

Issue

5

fYear

2005

Firstpage

1228

Lastpage

1235

Abstract

Simulations based on a carrier heating model are performed to investigate the behavior of a directly modulated 1.55-μm InGaAsP distributed feedback (DFB) laser diode (LD). Results show that bandgap shrinkage has a significant effect on the simulated nonlinear behavior of LDs. However, the varying nature of lattice temperature and excess carrier energy relaxation is important to produce simulated results that agree with measured results.

Keywords

III-V semiconductors; distributed feedback lasers; energy gap; gallium arsenide; indium compounds; nonlinear dynamical systems; nonlinear optics; optical modulation; semiconductor device models; semiconductor lasers; thermo-optical effects; InGaAsP distributed feedback laser diode; bandgap shrinkage; carrier energy relaxation; carrier heating model; direct modulation; nonlinear dynamics; thermal effects; Diode lasers; Distributed feedback devices; Energy measurement; Heating; Laser feedback; Laser modes; Lattices; Photonic band gap; Semiconductor lasers; Temperature; Chaos; laser stability; nonlinear optics; semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2005.853748

Filename

1564066