DocumentCode :
774436
Title :
A novel offset gated polysilicon thin film transistor without an additional offset mask
Author :
Min, Byung-Hyuk ; Park, Cheol-Min ; Han, Min-Koo
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume :
16
Issue :
5
fYear :
1995
fDate :
5/1/1995 12:00:00 AM
Firstpage :
161
Lastpage :
163
Abstract :
We have proposed a novel offset gated polysilicon TFT fabricated without an offset mask in order to reduce leakage current and suppress the kink effect. The photolithographic process steps of the new TFT device are identical to those of conventional non-offset structure TFT´s and an additional mask to fabricate an offset structure is not required in our device. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The novel TFT also exhibits a considerable reduction in the kink effect because a very thin film TFT may be easily fabricated due to the elimination of the contact over-etch problem.<>
Keywords :
MOSFET; elemental semiconductors; leakage currents; photolithography; silicon; thin film transistors; NMOSFET; Si; kink effect suppression; leakage current reduction; offset gated TFT; photolithographic process; polysilicon TFT; thin film transistor; Active matrix liquid crystal displays; Amorphous silicon; Annealing; Etching; Fabrication; Leakage current; Semiconductor films; Substrates; Thin film devices; Thin film transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.382226
Filename :
382226
Link To Document :
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