DocumentCode
774493
Title
Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system
Author
Shen, Jianbing ; Kramer, Gerhard ; Tehrani, S. ; Goronkin, H.
Author_Institution
Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA
Volume
16
Issue
5
fYear
1995
fDate
5/1/1995 12:00:00 AM
Firstpage
178
Lastpage
180
Abstract
We have fabricated SRAM´s based on resonant interband tunneling diodes in the InAs/AlSb/GaSb material system. The bistability and the switching principles are demonstrated. Numerical simulations of the memory characteristics of the SRAM cell are performed and used for comparing with experiments. Several key issues involving the applications of the device are also discussed.<>
Keywords
III-V semiconductors; SRAM chips; aluminium compounds; circuit bistability; gallium compounds; indium compounds; resonant tunnelling diodes; InAs-GaSb-AlSb; RTD based memory; SRAM; bistability; memory characteristics; resonant interband tunneling diodes; static random access memories; switching principles; Application software; Diodes; Etching; Numerical simulation; Random access memory; Read-write memory; Research and development; Resonance; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.382232
Filename
382232
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