Title :
A low cost and high current gain a-Si/c-Si heterojunction photoreceiver for large area optoelectronics integrated circuit applications
Author :
Fang, Y.K. ; Liu, C.R. ; Chen, K.H. ; Lin, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/1995 12:00:00 AM
Abstract :
An integrated a-Si/c-Si heterojunction p-i-n/n-p-n photoreceiver with high current gain performance is reported. The operation mechanism and experimental results of the device are discussed in the letter. In comparison with other III-V compound photoreceivers, the developed device does not need an additional gate bias and shows its compatibility with the periphery circuit for optoelectronic integrated circuit (OEIC) applications.<>
Keywords :
amorphous semiconductors; elemental semiconductors; integrated optoelectronics; optical receivers; p-i-n photodiodes; silicon; Si-Si; a-Si/c-Si; current gain; heterojunction photoreceiver; large area optoelectronics integrated circuit; operation mechanism; p-i-n/n-p-n photoreceiver; periphery circuit; Amorphous silicon; Application specific integrated circuits; Bipolar transistors; Costs; Crystalline materials; Heterojunctions; Optical materials; Optical receivers; PIN photodiodes; Performance gain;
Journal_Title :
Electron Device Letters, IEEE
