Nitride-Based Schottky Barrier Sensor Module With High Electrostatic Discharge Reliability

Author

Horng, J.J. ; Su, Y.K. ; Chang, S.J. ; Ko, T.K. ; Shei, S.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

19

Issue

10

fYear

2007

fDate

5/15/2007 12:00:00 AM

Firstpage

717

Lastpage

719

Abstract

In this study, we proposed and realized a nitride-based Schottky barrier sensor module with high electrostatic discharge (ESD) reliability. By including a Si-based ESD protection chip into the module, we can significantly enhance endurable ESD voltages under both forward and reverse human-body-mode (HBM) ESD stresses. It was found that the fabricated module can endure reverse HBM ESD stress of 7.5 KV and forward HBM ESD stress larger than 8 KV. It was also found that the inclusion of the Si-based ESD protection chip will not result in a decrease in detector responsivity

Keywords

CMOS integrated circuits; III-V semiconductors; Schottky barriers; aluminium compounds; electrostatic discharge; gallium compounds; integrated optoelectronics; photodetectors; semiconductor device reliability; silicon; ultraviolet detectors; 7.5 kV; AlGaN; Schottky barrier sensor module; Si; Si CMOS chip; Si-based ESD protection chip; detector responsivity; electrostatic discharge; electrostatic discharge reliability; human-body-mode ESD stresses; nitride-based sensor module; ultraviolet sensor chip; Aluminum gallium nitride; Chemical sensors; Electrostatic discharge; Gallium nitride; Light emitting diodes; MOSFETs; Protection; Schottky barriers; Sensor phenomena and characterization; Stress; AlGaN; electrostatic discharge (ESD); protection chip; sensor module; ultraviolet (UV);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.895056

Filename

4154815