A novel /spl beta/-SiC/Si heterojunction backward diode

Author

Hwang, J.D. ; Fang, Y.K. ; Chen, K.H. ; Yaung, D.N.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

16

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

193

Lastpage

195

Abstract

In this letter, a novel /spl beta/-SiC/Si heterojunction backward diode has been developed successfully. The developed new backward diode is somewhat different from a conventional one. The /spl beta/-SiC thin film was grown by a low pressure rapid thermal chemical vapor deposition (LP-RTCVD) using a SiH/sub 4/-C/sub 3/H/sub 8/-H/sub 2/ gas system. Its current-voltage characteristics under different operation temperatures (25-200/spl deg/C) have been measured. In addition, the curvature coefficient /spl gamma/ has also been calculated and it is found to be insensitive to temperature variation up to 180/spl deg/C. The operation temperature is the highest reported thus far, to our knowledge.<>

Keywords

characteristics measurement; chemical vapour deposition; elemental semiconductors; rapid thermal processing; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; silicon compounds; tunnel diodes; /spl beta/-SiC/Si; 25 to 200 degC; Si; SiC-Si; current-voltage characteristics; curvature coefficient; heterojunction backward diode; low pressure rapid thermal chemical vapor deposition; operation temperatures; temperature variation; tunnel diodes; Current-voltage characteristics; Heterojunctions; Photonic band gap; Semiconductor diodes; Semiconductor materials; Silicon carbide; Substrates; Temperature; Tunneling; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.382237

Filename

382237