DocumentCode
774571
Title
Field effect real space transfer transistor
Author
Koscica, Thomas E. ; Zhao, Jian H.
Author_Institution
Microwave Div., US Army Res. Lab., Ft. Monmouth, NJ, USA
Volume
16
Issue
5
fYear
1995
fDate
5/1/1995 12:00:00 AM
Firstpage
196
Lastpage
198
Abstract
We report demonstration of the first field effect real space transfer transistor (FERST), a gated real space carrier transfer device. It is a dual output, multifunctional device which, depending on region of operation, demonstrates either of three characteristics: traditional FET transconductance, sign reversing transconductance, or dual output with near complimentary transconductances. Additionally, the FERST structure provides a new means for exploring the physics of real space transfer.<>
Keywords
charge-coupled devices; field effect transistors; hot carriers; FERST; dual output; field effect real space transfer transistor; gated real space carrier transfer device; multifunctional device; sign reversing transconductance; traditional FET transconductance; Charge carriers; Circuits; FETs; Physics; Rapid thermal annealing; Space charge; Switches; Temperature; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.382238
Filename
382238
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