Title :
Field effect real space transfer transistor
Author :
Koscica, Thomas E. ; Zhao, Jian H.
Author_Institution :
Microwave Div., US Army Res. Lab., Ft. Monmouth, NJ, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
We report demonstration of the first field effect real space transfer transistor (FERST), a gated real space carrier transfer device. It is a dual output, multifunctional device which, depending on region of operation, demonstrates either of three characteristics: traditional FET transconductance, sign reversing transconductance, or dual output with near complimentary transconductances. Additionally, the FERST structure provides a new means for exploring the physics of real space transfer.<>
Keywords :
charge-coupled devices; field effect transistors; hot carriers; FERST; dual output; field effect real space transfer transistor; gated real space carrier transfer device; multifunctional device; sign reversing transconductance; traditional FET transconductance; Charge carriers; Circuits; FETs; Physics; Rapid thermal annealing; Space charge; Switches; Temperature; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
