A new functional optical-electrical switch using a multi-emitter heterojunction phototransistor

Author

Imamura, K. ; Takatsu, T. ; Mori, T. ; Muto, S. ; Yokoyama, N.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

16

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

202

Lastpage

204

Abstract

We propose a new functional optical-electrical switching device: a multi-emitter heterojunction photo-transistor (ME-HPT) using a multi-emitter heterojunction bipolar transistor (ME-HBT) structure. In this device, the collector current (I/sub C/) can be controlled by not only the incident radiant power (P/sub 0/) but also the voltage difference between emitters (V/sub EE/). We fabricated ME-HPT´s using InGaAs/InP heterostructures and confirmed the normal operation. Using only one ME-HPT, we have successfully demonstrated a new functional optical-electrical switching operation, which can switch on only when both the electrical and optical signals are high.<>

Keywords

III-V semiconductors; bipolar transistor switches; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical switches; photoconducting switches; phototransistors; InGaAs-InP; collector current; incident radiant power; multi-emitter heterojunction bipolar transistor; multi-emitter heterojunction phototransistor; normal operation; optical-electrical switch; voltage difference; Charge carrier processes; Electrodes; Heterojunction bipolar transistors; High speed optical techniques; Optical devices; Optical switches; Phototransistors; Stimulated emission; Tunneling; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.382240

Filename

382240