Title :
Yield modeling of acoustic charge transport transversal filters
Author :
Kenney, J. Stevenson ; May, Gary S. ; Hunt, William D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
This paper presents a yield model for acoustic charge transport transversal filters. This model differs from previous IC yield models in that it does not assume that individual failures of the nondestructive sensing taps necessarily cause a device failure. A redundancy in the number of taps included in the design is explained. Poisson statistics are used to describe the tap failures, weighted over a uniform defect density distribution. A representative design example is presented. The minimum number of taps needed to realize the filter is calculated, and tap weights for various numbers of redundant taps are calculated. The critical area for device failure is calculated for each level of redundancy. Yield is predicted for a range of defect densities and redundancies. To verify the model, a Monte Carlo simulation is performed on an equivalent circuit model of the device. The results of the yield model are then compared to the Monte Carlo simulation. Better than 95% agreement was obtained for the Poisson model with redundant taps ranging from 30% to 150% over the minimum
Keywords :
Monte Carlo methods; Poisson distribution; acoustic charge transport devices; equivalent circuits; failure analysis; integrated circuit modelling; integrated circuit yield; redundancy; surface acoustic wave filters; IC yield model; Monte Carlo simulation; Poisson statistics; acoustic charge transport transversal filters; critical area; defect density; design; device failure; equivalent circuit; nondestructive sensing taps; redundancy; tap weights; Acoustic devices; Application software; Charge coupled devices; Digital signal processing; Gallium arsenide; Integrated circuit modeling; Piezoelectric materials; Semiconductor materials; Space technology; Transversal filters;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on