DocumentCode :
774868
Title :
A 600-kV, 10-mA DC Cockcroft-Walton Rectifier Using Silicon Diodes at 100 kc
Author :
Reginato, Louis L. ; Smith, Bob H.
Author_Institution :
Lawrence Radiation Laboratory University of California Berkeley, California
Volume :
12
Issue :
3
fYear :
1965
fDate :
6/1/1965 12:00:00 AM
Firstpage :
274
Lastpage :
278
Abstract :
In this rectifier high-speed silicon diodes, etched circuit boards, and SF6 are combined in a style of construction that requires only the modest shop facilities of any typical small physics laboratory. This paper covers construction techniques, performance tests, electronic regulation, high-speed protection circuitry, and application of the rectifier to experimental equipment. The technique described can be extended to larger sizes providing several million volts.
Keywords :
Circuit testing; Diodes; Electronic equipment testing; Etching; Laboratories; Physics; Printed circuits; Rectifiers; Silicon; Sulfur hexafluoride;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1965.4323635
Filename :
4323635
Link To Document :
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