Title :
Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process
Author :
Chang, Tzu Yun ; Lei, Tan Fu ; Chao, Tien Sheng ; Wen, Huang Chun ; Chen, Hsiao Wei
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2002 12:00:00 AM
Abstract :
This study describes a novel technique to form low temperature oxide (<350/spl deg/C). Low-temperature oxides were formed by N/sub 2/O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF/sub 4/ pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF/sub 4/ plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.
Keywords :
CMOS integrated circuits; MOS capacitors; dielectric thin films; leakage currents; oxidation; plasma CVD; semiconductor device breakdown; silicon compounds; MOS capacitors; Si; SiO/sub 2/; TDDB; current-voltage characteristics; gate oxide integrity; low-temperature gate dielectric; low-temperature processes; plasma-enhanced chemical vapor deposition; replacement gate CMOS application; tetrafluoromethane plasma treatment; thermal oxides; ultrathin gate oxides; wet oxidation; Chaos; Chemical vapor deposition; Dielectric measurements; Insulation; Plasma applications; Plasma chemistry; Plasma devices; Plasma properties; Plasma sources; Plasma temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.1015208
