A high-speed, high-sensitivity silicon lateral trench photodetector

Author

Yang, Min ; Rim, Kern ; Rogers, Dennis L. ; Schaub, Jeremy D. ; Welser, Jeffrey J. ; Kuchta, Daniel M. ; Boyd, Diane C. ; Rodier, Francis ; Rabidoux, Paul A. ; Marsh, James T. ; Ticknor, Adam D. ; Yang, Qingyun ; Upham, Allan ; Ramac, Samuel C.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

23

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

395

Lastpage

397

Abstract

We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, exhibits a 6-dB bandwidth of 1.5 GHz at 3.0 V and an external quantum efficiency of 68% at 845 nm wavelength. A photoreceiver with a wire-bonded lateral trench detector and a BiCMOS transimpedance amplifier demonstrates excellent operation at 2.5 Gb/s data rate and 845 nm wavelength with only a 3.3 V bias.

Keywords

BiCMOS analogue integrated circuits; elemental semiconductors; frequency response; integrated optoelectronics; isolation technology; optical receivers; p-i-n photodiodes; photodetectors; silicon; 1.5 GHz; 2.5 Gbit/s; 3 V; 845 nm; BiCMOS transimpedance amplifier; Si; VLSI compatible processes; carrier transit distance; external quantum efficiency; frequency response; high responsivity; high-sensitivity; high-speed photodetector; interdigitated fingers; lateral p-i-n photodiode; lateral trench photodetector; light absorption depth; photoreceiver; reactive ion etching; small-signal modulation; wire-bonded detector; Absorption; Bandwidth; Detectors; Operational amplifiers; Optical receivers; Optical surface waves; PIN photodiodes; Photodetectors; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1015212

Filename

1015212