A low-voltage CMOS complementary active pixel sensor (CAPS) fabricated using a 0.25 μm CMOS technology

Author

Chen Xu ; Wing-Hung Ki ; Mansun Chan

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

23

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

398

Lastpage

400

Abstract

A low voltage rail-to-rail CMOS complementary active pixel sensor (CAPS) architecture is presented. Compared with a conventional active pixel sensor (APS), the CAPS surpasses the bottleneck of limited output swing at ultra-low supply voltage operation imposed by highly scaled technology, making it more scalable compared with other reported architectures. The CAPS has been implemented with a commercially available 0.25 μm CMOS technology. The pixel size of the fabricated CAPS is 12 μm × 10 μm with a fill factor of 30%. It is verified that the CAPS is capable to operate at a V_DD below 1 V with a reasonable output swing.

Keywords

CMOS image sensors; bootstrap circuits; low-power electronics; 1 V; CMOS pixel sensor; bootstrapping techniques; dynamic range; in-pixel amplifier; limited output swing; low voltage; rail-to-rail complementary active pixel sensor; scaling limit; subquarter micron technology; threshold voltage; CMOS image sensors; CMOS technology; Dynamic range; Low voltage; MOSFET circuits; Multimedia systems; Power supplies; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1015213

Filename

1015213