Title : 
A low-voltage CMOS complementary active pixel sensor (CAPS) fabricated using a 0.25 μm CMOS technology
         
        
            Author : 
Chen Xu ; Wing-Hung Ki ; Mansun Chan
         
        
            Author_Institution : 
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
         
        
        
        
        
            fDate : 
7/1/2002 12:00:00 AM
         
        
        
        
            Abstract : 
A low voltage rail-to-rail CMOS complementary active pixel sensor (CAPS) architecture is presented. Compared with a conventional active pixel sensor (APS), the CAPS surpasses the bottleneck of limited output swing at ultra-low supply voltage operation imposed by highly scaled technology, making it more scalable compared with other reported architectures. The CAPS has been implemented with a commercially available 0.25 μm CMOS technology. The pixel size of the fabricated CAPS is 12 μm × 10 μm with a fill factor of 30%. It is verified that the CAPS is capable to operate at a VDD below 1 V with a reasonable output swing.
         
        
            Keywords : 
CMOS image sensors; bootstrap circuits; low-power electronics; 1 V; CMOS pixel sensor; bootstrapping techniques; dynamic range; in-pixel amplifier; limited output swing; low voltage; rail-to-rail complementary active pixel sensor; scaling limit; subquarter micron technology; threshold voltage; CMOS image sensors; CMOS technology; Dynamic range; Low voltage; MOSFET circuits; Multimedia systems; Power supplies; Silicon on insulator technology; Threshold voltage;
         
        
        
            Journal_Title : 
Electron Device Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/LED.2002.1015213