Comparison of electrical and reliability characteristics of different 14 /spl Aring/ oxynitride gate dielectrics

Author

Pan, Tung-Ming ; Lin, Hsiu-Shan ; Chen, Main-Gwo ; Liu, Chuan-Hsi ; Chang, Yih-Jau

Author_Institution

Quality & Reliability Assurance Div., United Microelectron. Corp., Hsinchu, Taiwan

Volume

23

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

416

Lastpage

418

Abstract

A comparison of RTNO, N/sub 2/O and N/sub 2/O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 /spl Aring/ is explored. The N/sub 2/O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.

Keywords

CMOS integrated circuits; MOSFET; ULSI; dielectric thin films; integrated circuit reliability; nitridation; rapid thermal processing; semiconductor device reliability; silicon compounds; 14 A; ISSG process; RTNO film; SiON; electrical characteristics; equal physical oxide thickness; interface properties; nMOSFET; pMOSFET; reliability characteristics; remote microwave plasma; remote plasma nitridation treatment; ultralarge scale integration devices; ultrathin oxynitride gate dielectrics; wet oxide process; Annealing; Atomic measurements; CMOS logic circuits; CMOS technology; Dielectric devices; Microelectronics; Nitrogen; Plasma devices; Plasma properties; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1015223

Filename

1015223