Temperature dependence of hot-carrier-induced degradation in 0.1 μm SOI nMOSFETs with thin oxide

Author

Wen-Kuan Yeh ; Wen-Han Wang ; Yean-Kuen Fang ; Fu-Liang Yang

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan

Volume

23

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

425

Lastpage

427

Abstract

This letter investigates hot-carrier-induced degradation on 0.1 μm partially depleted silicon-on-insulator (SOI) nMOSFETs at various ambient temperatures. The thermal impact on device degradation was investigated with respect to body-contact nMOSFETs (BC-SOI) and floating-body SOI nMOSFETs (FB-SOI). Experimental results show that hot-carrier-induced degradation on drive capacity of FB-SOI devices exhibits inverse temperature dependence compared to that of BC-SOI devices. This is attributed to the floating-body effect (FBE) and parasitic bipolar transistor (PBT) effect.

Keywords

MOSFET; hot carriers; interface states; silicon-on-insulator; CMOSFET; SIMOX; SOI nMOSFET; body-contact nMOSFET; floating-body SOI; floating-body effect; hot-carrier-induced degradation; parasitic bipolar transistor effect; partially depleted silicon-on-insulator; temperature dependence; thin oxide; trapped charges; Bipolar transistors; Hot carrier effects; Hot carriers; MOSFETs; Silicon compounds; Silicon on insulator technology; Substrates; Temperature dependence; Thermal degradation; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1015228

Filename

1015228