Title :
A simple and accurate method for extracting substrate resistance of RF MOSFETs
Author :
Han, Jeonghu ; Je, Minkyu ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
7/1/2002 12:00:00 AM
Abstract :
In this paper, a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET, the substrate of which is represented by a single resistor. The extraction results from the measured network parameters are presented for various bias conditions. Excellent agreement between the results of measurements and the model for the extracted substrate resistance was obtained up to 18 GHz. Also, the resistance extracted using the proposed method was shown to give scalable results.
Keywords :
MOSFET; electric resistance measurement; microwave field effect transistors; microwave measurement; network parameters; semiconductor device models; 18 GHz; RF MOSFET model; RF MOSFETs; S-parameters; bias conditions; network parameters; scalable results; single resistor; substrate resistance extraction; Capacitance; Curve fitting; Electrical resistance measurement; Equivalent circuits; Immune system; MOSFETs; Predictive models; Radio frequency; Resistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.1015234
