Growth of SiC nanoparticle films by means of RF magnetron sputtering

Author

Xu, M. ; Ng, V.M. ; Huang, S.Y. ; Long, J.D. ; Xu, S.

Author_Institution

Plasma Sources & Applications Center, Nanyang Technol. Univ., Singapore

Volume

33

Issue

2

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

242

Lastpage

243

Abstract

Plasma radio frequency (RF) magnetron sputtering growth of SiC nanoparticle films on AlN buffered Si(100) is investigated under different reactive gas flows. Introduction of hydrogen into the growth is found to yield a strongest photoluminescence (PL) at 620 nm. If the hydrogen gas flow is zero, or replaced by methane, the PL intensity decreases and the peak is red-shifted to round 680 and 660 nm. These results are discussed in relation to the morphological, compositional, and structural analysis.

Keywords

nanoparticles; photoluminescence; plasma materials processing; red shift; semiconductor growth; semiconductor thin films; silicon compounds; sputter deposition; sputtered coatings; wide band gap semiconductors; 620 nm; Si-AlN; SiC; compositional analysis; hydrogen; methane; morphological analysis; nanoparticle films; photoluminescence; plasma radiofrequency magnetron sputtering; reactive gas flows; red shift; structural analysis; Fluid flow; Hydrogen; Magnetic confinement; Optical films; Photoluminescence; Plasma displays; Plasma temperature; Radio frequency; Silicon carbide; Sputtering; Nanoparticle films; SiC; photoluminescence; radio frequency magnetron sputtering;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2005.845339

Filename

1420417