Title :
Growth of SiC nanoparticle films by means of RF magnetron sputtering
Author :
Xu, M. ; Ng, V.M. ; Huang, S.Y. ; Long, J.D. ; Xu, S.
Author_Institution :
Plasma Sources & Applications Center, Nanyang Technol. Univ., Singapore
fDate :
4/1/2005 12:00:00 AM
Abstract :
Plasma radio frequency (RF) magnetron sputtering growth of SiC nanoparticle films on AlN buffered Si(100) is investigated under different reactive gas flows. Introduction of hydrogen into the growth is found to yield a strongest photoluminescence (PL) at 620 nm. If the hydrogen gas flow is zero, or replaced by methane, the PL intensity decreases and the peak is red-shifted to round 680 and 660 nm. These results are discussed in relation to the morphological, compositional, and structural analysis.
Keywords :
nanoparticles; photoluminescence; plasma materials processing; red shift; semiconductor growth; semiconductor thin films; silicon compounds; sputter deposition; sputtered coatings; wide band gap semiconductors; 620 nm; Si-AlN; SiC; compositional analysis; hydrogen; methane; morphological analysis; nanoparticle films; photoluminescence; plasma radiofrequency magnetron sputtering; reactive gas flows; red shift; structural analysis; Fluid flow; Hydrogen; Magnetic confinement; Optical films; Photoluminescence; Plasma displays; Plasma temperature; Radio frequency; Silicon carbide; Sputtering; Nanoparticle films; SiC; photoluminescence; radio frequency magnetron sputtering;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2005.845339
