A 94-GHz monolithic balanced power amplifier using 0.1-μm gate GaAs-based HEMT MMIC production process technology

Author

Aust, M. ; Wang, H. ; Biedenbender, M. ; Lai, Richard ; Streit, D.C. ; Liu, P.H. ; Dow, G.S. ; Allen, B.R.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

5

Issue

1

fYear

1995

Firstpage

12

Lastpage

14

Abstract

A monolithic W-band two-stage balanced power amplifier has been developed using 0.1-μm AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMT technology. This monolithic power amplifier has demonstrated an output power of 102 mW and a small signal gain of 9 dB with input/output return losses of better than 10 dB at 94 GHz. Moreover, this monolithic chip is fabricated using production GaAs-based HEMT MMIC technology and a good yield is obtained. The circuit design relies on extensive EM analysis of matching structures and accurate device modeling. The success of this monolithic circuit development indicates the maturity of power HEMT MMIC technology at W-band.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; gallium arsenide; millimetre wave amplifiers; power HEMT; power amplifiers; power integrated circuits; 0.1 micron; 10 dB; 102 mW; 9 dB; 94 GHz; AlGaAs-InGaAs-GaAs; EHF; GaAs-based HEMT MMIC; MIMIC; MM-wave IC; MMIC production process technology; W-band; monolithic power amplifier; pseudomorphic T-gate power HEMT; two-stage balanced amplifier; Frequency; Gain; HEMTs; MMICs; Millimeter wave technology; Power amplifiers; Power generation; Power system modeling; Power system reliability; Production;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.382375

Filename

382375