• DocumentCode
    775319
  • Title

    Surface potential measurements of vacuum ultraviolet irradiated Al2O3, Si3N4, and SiO2

  • Author

    Lauer, J.L. ; Shohet, J.L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA
  • Volume
    33
  • Issue
    2
  • fYear
    2005
  • fDate
    4/1/2005 12:00:00 AM
  • Firstpage
    248
  • Lastpage
    249
  • Abstract
    Vacuum ultraviolet radiation (VUV), generated during plasma processing of semiconductors devices can induce charge on dielectric materials. By exposing dielectric coated wafers to synchrotron radiation of varying energy, it is possible to separate the photoemission and photoconductive effects, both of which result in an increase in the surface potential of the dielectric. Maps of the surface potential induced on the dielectrics by VUV can be obtained by the use of a Kelvin probe.
  • Keywords
    alumina; dielectric thin films; photoconductivity; photoemission; plasma materials processing; silicon compounds; surface potential; ultraviolet radiation effects; Al2O3; Kelvin probe; Si3N4; SiO2; dielectric coated wafers; dielectric materials; photoconduction; photoemission; plasma processing; semiconductor devices; surface potential; synchrotron radiation; vacuum ultraviolet irradiation; Dielectric materials; Dielectric measurements; Kelvin; Photoconductivity; Photoelectricity; Plasma devices; Plasma materials processing; Plasma measurements; Semiconductor devices; Synchrotron radiation; Plasma damage; plasma radiation; vacuum ultraviolet radiation (VUV);
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2005.845307
  • Filename
    1420420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=775319