Title :
Development of a novel mounting method for the fabrication of Pb-salt laser grown on [110] oriented BaF2 substrate
Author :
Ray, D. ; Bondili, S. ; Jain, S. ; Li, D. ; Zhao, F. ; Majumdar, A. ; Guan, Z. ; Shi, Z.
Author_Institution :
Optoelectronic Group, Univ. of Oklahoma, Norman, OK, USA
Abstract :
The development of a novel mounting method for the fabrication of a cleaved cavity Pb-salt laser grown on [110] BaF2 substrate is reported. The method involves bonding of the [110] oriented Pb-salt epitaxial layer on [100]-oriented GaAs wafers and removal of the BaF2 substrate. After epitaxial layers were grown by molecular beam epitaxy on the BaF2 substrate, the sample was bonded with the epilayer side down on GaAs wafers followed by an alignment process. The substrate was then completely etched away. The alignment and bonding technique allows the cleaving of Pb-salt layers in the natural cleavage plane {100}, leading to the formation of a cleaved cavity for the fabrication of a Fabry-Pe´rot Pb-salt diode laser.
Keywords :
bonding processes; etching; laser cavity resonators; lead compounds; optical fabrication; semiconductor growth; semiconductor lasers; BaF2; Fabry-Perot Pb-salt diode laser fabrication; bonding; cleaving; etching; molecular beam epitaxy; oriented BaF2 substrate; Epitaxial layers; Gallium arsenide; Laser theory; Laser tuning; Molecular beam epitaxial growth; Optical device fabrication; Quantum cascade lasers; Semiconductor lasers; Substrates; Wafer bonding; AuIn; bonding; cleaved Pb–salt layer;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.861969
