Development of a novel mounting method for the fabrication of Pb-salt laser grown on [110] oriented BaF2 substrate

The development of a novel mounting method for the fabrication of a cleaved cavity Pb-salt laser grown on [110] BaF₂ substrate is reported. The method involves bonding of the [110] oriented Pb-salt epitaxial layer on [100]-oriented GaAs wafers and removal of the BaF₂ substrate. After epitaxial layers were grown by molecular beam epitaxy on the BaF₂ substrate, the sample was bonded with the epilayer side down on GaAs wafers followed by an alignment process. The substrate was then completely etched away. The alignment and bonding technique allows the cleaving of Pb-salt layers in the natural cleavage plane {100}, leading to the formation of a cleaved cavity for the fabrication of a Fabry-Pe´rot Pb-salt diode laser.