Title :
A SiGe BiCMOS burst-mode 155-Mb/s receiver for PON
Author :
Brigati, Simona ; Colombara, Paolo ; Ascoli, Lucio D. ; Gatti, Umberto ; Kerekes, Tibor ; Malcovati, Piero
Author_Institution :
ACCO Microelettronica S.r.l, Pavia, Italy
fDate :
7/1/2002 12:00:00 AM
Abstract :
In this paper, we present an integrated 155-Mb/s burst-mode receiver (BMR) for passive optical network (PON) applications. The chip has been designed to receive optical signals over a wide dynamic range (-30 to -8 dBm) and temperature range (-40°C to +85°C). The chip was implemented using a 0.8-μm 35-GHz SiGe BiCMOS technology and occupies an area of 4.3×4.9 mm2 with a power consumption of 500 mW from a supply voltage of 5 V (3.3 V for the digital PECL output). In the receiver analog front end, we used a low-noise wide-band transimpedance amplifier followed by a nonlinear gain stage to cover a wide signal range without changing the transimpedance gain. The circuit dynamically adjusts the receiver threshold voltage through a feedback loop, thus optimizing the pulsewidth distortion and canceling the optical as well as the electrical offset voltages
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; asynchronous transfer mode; digital-analogue conversion; feedback amplifiers; integrated optoelectronics; operational amplifiers; optical fibre subscriber loops; optical receivers; sample and hold circuits; -40 to 85 C; 155 Mbit/s; BiCMOS burst-mode receiver; SiGe; closed-loop architecture; digital PECL output; digital-to-analog converters; eye diagram; fast comparator; feedback loop; integrated receiver; low-noise wide-band transimpedance amplifier; nonlinear gain stage; passive optical network; pulsewidth distortion; receiver analog front end; receiver threshold voltage; sample-and-hold structure; upstream burst-mode operation; wide dynamic range; wide temperature range; BiCMOS integrated circuits; Germanium silicon alloys; Nonlinear optics; Optical distortion; Optical feedback; Optical receivers; Passive optical networks; Pulse amplifiers; Silicon germanium; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.1015687
