Title :
Optical emission from pulsed DC magnetron sputtering plasmas
Author :
Lopez, Jose ; Zhu, WeiDong ; Freilich, Alfred ; Belkind, Abraham ; Becker, Kurt
Author_Institution :
Dept. of Phys. & Eng. Phys., Stevens Inst. of Technol., Hoboken, NJ, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
Reactive sputter deposition of dielectric films such as Al2O3 in a low-pressure magnetron plasma suffers from arcing on the target electrode, which affects the quality of the deposited film and may damage the power supply. The arcing is caused by charge buildup on the dielectric film that is inevitably deposited on the target (as well as on all other inside surfaces of the vacuum chamber), even when pulsed direct current (dc) power is used. The application of a small reverse voltage pulse to the target during the "off time" (which is the period during which the main pulsed dc power is off) has been found to neutralize these charges and reduce arcing. In an effort to better understand the effects of plasma power on the microscopic details of magnetron sputtering using pulsed dc excitation, we studied the optical plasma emissions from such a plasma with a fast intensified charge coupled device camera during the sputter deposition of Al2O3 films.
Keywords :
alumina; arcs (electric); dielectric thin films; high-frequency discharges; plasma confinement; plasma density; plasma diagnostics; plasma light propagation; plasma materials processing; plasma transport processes; sputter deposition; Al2O3; arcing; charge buildup; dielectric films; fast intensified charge coupled device camera; low-pressure magnetron plasma; optical plasma emissions; pulsed DC magnetron sputtering plasmas; pulsed direct current power; reactive sputter deposition; reverse voltage pulse; target electrode; vacuum chamber; Charge-coupled image sensors; Dielectric films; Electrodes; Optical films; Optical microscopy; Optical pulses; Plasma devices; Pulsed power supplies; Sputtering; Stimulated emission; Alumina; imaging; magnetron plasma; optical emissions; sputter deposition;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2005.845048