Title :
Plasma enhanced chemical vapor deposition of silicon under relatively high pressure conditions
Author :
Amanatides, E. ; Lykas, B. ; Mataras, D.
Author_Institution :
Dept. of Chem. Eng., Univ. of Patras, Patras, Greece
fDate :
4/1/2005 12:00:00 AM
Abstract :
A two-dimensional self-consistent model of highly-diluted SiH4 in H2 discharges used for the deposition of microcrystalline silicon thin films is presented. The promising high-pressure regime (1-10 torr), that has been shown experimentally to lead at high growth rates and high crystalline volume fraction, is examined. The main effects of the pressure increase on the power dissipation, the electron density, and the species distribution in the discharge are presented and discussed.
Keywords :
elemental semiconductors; high-frequency discharges; hydrogen; plasma CVD; plasma CVD coatings; plasma density; plasma pressure; plasma simulation; semiconductor thin films; silicon; 1 to 10 torr; H2 discharges; Si:H; crystalline volume fraction; electron density; highly-diluted SiH4; microcrystalline silicon thin films; plasma enhanced chemical vapor deposition; power dissipation; species distribution; two-dimensional self-consistent model; Chemical vapor deposition; Crystallization; Electrodes; Electrons; Plasma chemistry; Power dissipation; Radio frequency; Silicon; Sputtering; Surface discharges; Microcrystalline silicon; plasma enhanced chemical vapor deposition; radio frequency discharges; self-consistent modeling; silane; solar cells;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2005.845308
