Plasma enhanced chemical vapor deposition of silicon under relatively high pressure conditions

Author

Amanatides, E. ; Lykas, B. ; Mataras, D.

Author_Institution

Dept. of Chem. Eng., Univ. of Patras, Patras, Greece

Volume

33

Issue

2

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

372

Lastpage

373

Abstract

A two-dimensional self-consistent model of highly-diluted SiH₄ in H₂ discharges used for the deposition of microcrystalline silicon thin films is presented. The promising high-pressure regime (1-10 torr), that has been shown experimentally to lead at high growth rates and high crystalline volume fraction, is examined. The main effects of the pressure increase on the power dissipation, the electron density, and the species distribution in the discharge are presented and discussed.

Keywords

elemental semiconductors; high-frequency discharges; hydrogen; plasma CVD; plasma CVD coatings; plasma density; plasma pressure; plasma simulation; semiconductor thin films; silicon; 1 to 10 torr; H₂ discharges; Si:H; crystalline volume fraction; electron density; highly-diluted SiH₄; microcrystalline silicon thin films; plasma enhanced chemical vapor deposition; power dissipation; species distribution; two-dimensional self-consistent model; Chemical vapor deposition; Crystallization; Electrodes; Electrons; Plasma chemistry; Power dissipation; Radio frequency; Silicon; Sputtering; Surface discharges; Microcrystalline silicon; plasma enhanced chemical vapor deposition; radio frequency discharges; self-consistent modeling; silane; solar cells;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2005.845308

Filename

1420482