Title :
1260 nm InGaAs vertical-cavity lasers
Author :
Asplund, C. ; Sundgren, P. ; Mogg, S. ; Hammar, M. ; Christiansson, U. ; Oscarsson, V. ; Runnstrm, C. ; Odling, E. ; Malmquist, J.
Author_Institution :
Dept. of Microelectron., R. Inst. of Technol., Kista, Sweden
fDate :
6/20/2002 12:00:00 AM
Abstract :
The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120°C
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; 10 to 120 degC; 1260 nm; InGaAs-GaAs; InGaAs/GaAs; continuous-wave range; device diameter; emission wavelength; highly strained double-quantum well lasers; output power; room temperature; temperature range; threshold current; vertical-cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020431
