• DocumentCode
    776342
  • Title

    Evaluation of sequential-in-random-out memory device

  • Author

    Chang, C.-Y. ; Hou, T.-W. ; Shieh, C.-K.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    31
  • Issue
    8
  • fYear
    1995
  • fDate
    4/13/1995 12:00:00 AM
  • Firstpage
    620
  • Lastpage
    621
  • Abstract
    The buffering of data is a potential bottleneck to performance. In general, the buffer can be implemented either by FIFO or dual-port RAM, which are both two-port memory devices. The authors propose a classification of buffers. According to the classification, a new two-port memory device with the sequential-in-random-out feature is introduced. Simulation results show that 45% time, at most, could be saved, as compared to a FIFO buffer
  • Keywords
    buffer storage; memory architecture; buffer; sequential-in-random-out memory device; two-port memory device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950454
  • Filename
    383992
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=776342