Title :
Enhancement of hot-carrier-induced degradation in ultra-thin gate oxide pMOSFETs stressed under high gate voltage
Author :
Chen, J.F. ; Tsao, C.-P. ; Ong, T.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/20/2002 12:00:00 AM
Abstract :
Enhanced hot-carrier-induced drain current degradation is observed in ultra-thin gate oxide pMOSFETs stressed under high gate voltage. Electron tunnelling from the gate plus an Auger-recombination-assisted hot hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide or devices stressed under lower drain voltage
Keywords :
Auger effect; MOSFET; electron-hole recombination; hot carriers; semiconductor device reliability; tunnelling; Auger-recombination assisted process; drain current degradation; electron tunnelling; gate voltage; hot hole energy gain; hot-carrier-induced degradation; ultra-thin gate oxide pMOSFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020450
