Title :
Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18°
Author :
Temmyo, J. ; Sugo, M.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
4/13/1995 12:00:00 AM
Abstract :
Epitaxial structures were designed for high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical-divergence emitting angle of 18°. A maximum free-space optical output of >500 mW and a singlemode-fibre coupled power of >250 mW were obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; refractive index; semiconductor epitaxial layers; 250 mW; 500 mW; InGaAs-AlGaAs; epitaxial structures; free-space optical output; quantum-well lasers; singlemode-fibre coupled power; strained quantum well; vertical-divergence emitting angle;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950448
