Title :
Gain measurement of high characteristic temperature 1.3 μm GaInAsP/InP strained-layer quantum well lasers with temperature dependent reflectivity (TDR) mirror
Author :
Kasukawa, A. ; Iwai, N. ; Yamanaka, N. ; Hosotani, A. ; Yokouchi, N.
Author_Institution :
Res. & Dev. Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
4/13/1995 12:00:00 AM
Abstract :
By comparing the optical gain of 1.3 μm strained-layer quantum well lasers with characteristic temperatures T0 of 150 K (high) and 60 K (typical), it is found that temperature insensitive net gain plays an important role in reducing the temperature sensitivity of the threshold current. The resonance frequency for high T0 lasers exhibits temperature insensitivity, resulting from the temperature insensitive net gain characteristics
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; laser variables measurement; optical modulation; quantum well lasers; 1.3 micron; 150 K; 60 K; GaInAsP-InP; characteristic temperature; net gain characteristics; optical gain; resonance frequency; strained-layer quantum well lasers; temperature dependent reflectivity mirror; temperature insensitive net gain; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950381
