DocumentCode :
776535
Title :
Nondestructive void size determination in copper metallization under passivation
Author :
Gan, Zhenghao ; Tan, Cher Ming ; Zhang, Guan
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Volume :
3
Issue :
3
fYear :
2003
Firstpage :
69
Lastpage :
78
Abstract :
A novel nondestructive failure analysis technique to rapidly locate tiny voids in narrow metallization line covered with passivation is proposed, based on the simulation results. In this technique, the current alteration in a metal line under study is recorded continuously when it is subjected to electron beam scanning and biased by a small external voltage. Finite-element analysis is performed to simulate the temperature distribution and current alteration in the metal line. The electron-beam heating is demonstrated as the most important factor contributing to the current alteration. Reconstruction of voids with any shape (such as wedge or slit) is possible on the basis of the gradient of the current alteration. It is found that the minimum detectable void size can be as low as 50 nm. Experimental verification of the technique is underway.
Keywords :
ULSI; copper; electromigration; electron beam testing; failure analysis; finite element analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; nondestructive testing; passivation; voids (solid); Cu; Cu metallization; current alteration gradient; deep-submicron metal lines; electron beam scanning; electron-beam heating; finite-element analysis; narrow metallization line; nondestructive failure analysis technique; nondestructive void size determination; passivation; temperature distribution; Analytical models; Copper; Electron beams; Failure analysis; Finite element methods; Metallization; Passivation; Performance analysis; Temperature distribution; Voltage;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2003.815285
Filename :
1229714
Link To Document :
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