Title :
Low-threshold mesa-etched vertical-cavity InGaAs/GaAs surface-emitting lasers grown by MOCVD
Author :
Mukaihara, T. ; Hayashi, Y. ; Hatori, N. ; Ohnoki, N. ; Matsutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan
fDate :
4/13/1995 12:00:00 AM
Abstract :
The authors have demonstrated a low threshold current of 0.33 mA and a threshold current density of 380 A/cm2 for MOCVD-grown InGaAs/GaAs vertical-cavity surface-emitting lasers with a pillar etched structure. The thermal characteristic of the fabricated device including thermal resistance and junction temperature rise is also discussed. Judging from this experiment, further reduction of threshold current can be expected by reducing nonradiative recombination and electrical resistance
Keywords :
III-V semiconductors; electron-hole recombination; etching; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 0.33 mA; InGaAs-GaAs; MOCVD; electrical resistance; junction temperature rise; mesa-etched vertical-cavity surface-emitting lasers; nonradiative recombination; pillar etched structure; thermal characteristic; thermal resistance; threshold current; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950431
