Title :
Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs
Author :
Crupi, Giovanni ; Xiao, Dongping ; Schreurs, Dominique M M -P ; Limiti, Ernesto ; Caddemi, Alina ; De Raedt, Walter ; Germain, Marianne
Author_Institution :
Electron. Eng. Dept., Rome Univ.
Abstract :
This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward "cold" model for modeling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHz
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; GaN; channel capacitance; forward cold model; high electron-mobility transistors; multibias equivalent-circuit extraction; scattering parameters; small-signal model; Aluminum gallium nitride; Electrons; Equivalent circuits; Frequency; Gallium nitride; HEMTs; MODFETs; Microelectronics; Microwave devices; Ohmic contacts; Gallium nitride; high electron-mobility transistor (HEMT); multibias; small-signal model;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.882403
