Title :
Recessed-gate InGaAs MESFETs with an AlAs etch-stop layer
Author :
Liao, M.P. ; East, J.R. ; Haddad, G.I.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/13/1995 12:00:00 AM
Abstract :
The authors have fabricated InGaAs MESFETs with a double selective gate recess process using a thin AlAs layer. Very low gate leakage is obtained since the gates are not in contact with the mesa sidewall. 1 μm×100 μm InGaAs MESFETs exhibit a transconductance, fT and fmax of 215 mS/mm, 24 GHz, and 70 GHz, respectively
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; semiconductor technology; 1 micron; 24 GHz; 70 GHz; InGaAs-AlAs; double selective gate recess process; etch-stop layer; gate leakage; recessed-gate MESFETs; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950415
